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 SD1728 (TH430)
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
.OPTI .30 .50 .I .GOLD .COMMON .P
MIZED FOR SSB MHz VOLTS MD - 30 dB METALLIZATION EMITTER OUT = 250 W PEP WITH 14.5 dB GAIN
.550 4LFL (M177) epoxy sealed ORDER CODE SD1728 BRANDING TH430
PIN CONNECTION
DESCRIPTION The SD1728 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS (T case = 25 C)
Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base 4. Emitter
VCBO VCEO VEBO IC PDISS TJ T STG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
110 55 4.0 40 330 +200 - 65 to +150
V V V A W C C
THERMAL DATA RTH(j-c)
November 1992
Junction-Case Thermal Resistance
0.4
C/W
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SD1728 (TH430)
ELECTRICAL SPECIFICATIONS (T case = 25 C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCES BVCEO BVEBO I CEO ICES hFE DYNAMIC
Symbol
I C = 200mA I C = 200mA I E = 20mA VCE = 30V VCE = 60V VCE = 6V
VBE = 0V IB = 0mA IC = 0mA IE = 0mA IE = 0mA IC = 10A
110 55 4.0 -- -- 15
-- -- -- -- -- --
-- -- -- 10 10 45
V V V mA mA --
Test Conditions
Value Min. Typ. Max.
Unit
POUT G P* IMD* c* COB
Note:
f = 30 MHz POUT = 250 W PEP POUT = 250 W PEP POUT = 250 W PEP f = 1 MHz
VCC = 50 V VCC = 50 V VCC = 50 V VCC = 50 V VCB = 50 V
ICQ = 150 mA ICQ = 150 mA ICQ = 150 mA ICQ = 150 mA
250 14.5 -- 37 --
-- -- -- -- --
-- -- -30 -- 360
W dB dBc % pF
* Tw o Tone Method; f1 = 30.00 MHz; f 2 = 30.001 MHz In Cl ass C: G P Mi n. 13.5 dB, Effici ency 65%@ 30MHz G P Mi n. 10 dB, Eff ici ency 57%@ 70MHz
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SD1728 (TH430)
TYPICAL PERFORMANCE
CLASS AB
POWER OUTPUT PEP vs POWER INPUT
COLLECTOR EFFICIENCY vs POWER OUTPUT PEP
INTERMODULATION DISTORTION vs POWER OUTPUT PEP
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SD1728 (TH430)
TYPICAL PERFORMANCE (cont'd) POWER GAIN vs POWER OUTPUT PEP
TEST CIRCUIT SSB - CLASS AB - 30 MHz
C1 : C2 : C3, C6 : C4, C5, C7 : C8 : C9 : C10, C14 : C11, C13, C15 : C12 : C16 :
Arco 429 Arco 4615 Arco 4213 Arco 4611 Arco 427 470F, 40V 100nF, 63V 1nF 10nF 220F, 63V
L1 L2 L3 L4 L5 L6 L7 R
: : : : : : :
5 Turns, Diameter 10mm, 1.3mm Wire, Length 15mm 2 Turns, Diameter 12mm, 2mm Wire, Length 8mm 1 Turn, Diameter 12mm, 2mm Wire, Length 5mm Hair Pin Copper Foil 20 x 5mm 1 Turn, Diameter 12mm, 2mm Wire, Length 8mm 5 Turns, Diameter 8mm, 1.3mm Wire, Length 18mm 3 Turns, Diameter 8mm, 1.3mm Wire, Length 15mm
: 0.25*
* 4 Resistors 1 0.5W in parallel
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SD1728 (TH430)
TYPICAL PERFORMANCE CLASS C POWER OUTPUT vs POWER INPUT F = 30 MHz COLLECTOR EFFICIENCY vs POWER OUTPUT
CLASS C
F = 70 MHz
POWER OUTPUT vs POWER INPUT
COLLECTOR EFFICIENCY vs POWER OUTPUT
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SD1728 (TH430)
TYPICAL PERFORMANCE (cont'd) COLLECTOR BASE CAPACITANCE vs COLLECTOR BASE VOLTAGE
DC SAFE OPERATING AREA
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SD1728 (TH430)
IMPEDANCE DATA (TYPICAL)
POUT = 250 W PEP VCC = 50 V
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SD1728 (TH430)
BIAS CIRCUIT
MOUNTING CIRCUIT Parts list on test circuit drawing
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SD1728 (TH430)
PACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0177 rev. A
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibili ty for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c)1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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